Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)
We report on the epitaxial stabilization of tetragonal DO22-type Mn3_dGa (d=0 to 2) films deposited on GaSb(001) by using a molecular beam epitaxy technique. The structural and the magnetic properties as functions of the Mn concentration are discussed. The growth orientation of Mn-Ga(114)//GaSb (001) caused the easy magnetocrystalline direction to be located in the film plane in our experiment, which differed from the ordinarily observed perpendicular magnetic-anisotropy of Mn3-dGa films. The increase in coercivity with increasing temperature for the MnGa film is possibly due to an increase in the anisotropy energy. The MnGa film exhibited an enhanced anisotropy energy with respect to Mn3Ga film. An increasing average saturation magnetization per Mn atom with decreasing Mn content was also observed, indicating a ferrimagnetic ordering with partially compensating moments of the two crystallographically different Mn sites in the DO22 structure.
Mn-Ga GaSb MBE Epitaxy
Wuwei Feng Dang Due Dung Yooleemi Shin Duong Van Thiet Sunglae Cho Xian Hao
Department of Physics, University of Ulsan, Ulsan 680-749 State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry,Chines
国际会议
2009 Korea-China Symposium on Advanced Functional Films for Information(2009中韩先进信息功能薄膜研讨会)
兰州
英文
1382-1386
2009-08-16（万方平台首次上网日期，不代表论文的发表时间）