Growth of GalnP Layers on Ge Vicinal Substrates for Multi-junction Solar Cells
In this research, we studied the growth of GalnP layers on Ge substrates for applications to multijunction solar cells. GalnP layers were grown on p-Ge (100) substrates with 6?off toward <111> by using low pressure metal-organic chemical vapor deposition (MOCVD). The growth temperature, mass flow ratio of group ? materials and ?/? ratio were varied in order to grow high-quality GalnP epitaxial layers. A GalnP layer with a 1.6-nm root-mean-square roughness was obtained at a 55％ In content. The doping profile in the GalnP and the Ge was characterized by using electrochemical capacitance voltage (ECV) measurements. The junction depth in the Ge substrate due to the diffusion of group V atoms from the GalnP layer was observed to be about 170 nm and did not increased significantly during the subsequent 1000sec annealing.
Solar cell GalnP MOCVD Germanium
Changjae Yang Keun Wook Shin Jungsub Kim Jaeyel Lee Euijoon Yoon Chang-Zoo Kim Ho Kwan Kang Won-Kyu Park
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 Korea Advanced Nano Fab Center, Suwon 443-270
国际会议
2009 Korea-China Symposium on Advanced Functional Films for Information(2009中韩先进信息功能薄膜研讨会)
兰州
英文
1387-1390
2009-08-16（万方平台首次上网日期，不代表论文的发表时间）