The Fabrication and SEM Analysis of MEMS Sensor Chip on the Si-surface Modified by Porous Al2O3
The Si-surface of MEMS sensor based on Si is too smooth to combine with the sensitive material, making it difficult to produce the MEM gas sensor, in this paper, aimed at the problem, a method od porous Al2O3 modifing the Si-sufface is proposed to solve this problem. A layer of aluminum film is formed on the Si-surface through the magnetron sputtering technique, then porous microstructure Al2O3 ceramic film is fabricated by the electrochemical anodic oxidation, and the composite semiconductor gas-sensing material of polyaniline and hexadecachloro zinc phthalocyanine (ZnPcCl16) is permeated in the holes of the film by chemical synthesis. In this paper, the SEM morphologies of porous Al2O3 ceramic film, the section of Si substrate and gas-sensing material permeated .in the holes are analyzed, and the best technological parameters are obtaned.
Porous Al2O3 MEMS Chip SEM
Yunbo Shi Liquan Wang Qiaohua Feng Mingyan Yu
Mechanical engineering postdoctoral research flow station Harbin Engineering University Harbin, Chin Mechanical engineering postdoctoral research flow station Harbin Engineering University Harbin, Chin The higher educational key laboratory for Measuring & Control Technology and Instrumentations of Hei
国际会议
哈尔滨
英文
287-291
2010-08-01（万方平台首次上网日期，不代表论文的发表时间）