The simulation study on 1/f noise in MOS device under proton irradiation

摘要：

This paper investigated the relationship between the 1/f noise and the defect in MOS device under proton irradiation by simulation method. The 1/f noise was thought to be related with the interface defect of Si/SiO2. We simulated the displacement per atom (DPA) around the interface by SRIM code. The energy of irradiational particle ranged from 400 to 3000 eV. The theoritical result showed that the noise power spectra reached the maximum value at the energy of 600 keV. This result contributed to value the durability of MOS device under particle irradiation.

关键词： 1/fnosie irradiation simulation

作者: Zhong kun Cheng guo sheng Yuan shun zhou Zhao lei

作者单位: College of math & physics, Nanjing university of information science & technology, Nanjing, China, 210044

会议类型: 国际会议

会议名称: 2010 International Conference on Application of Mathematics and Physics(2010国际数理科学与气象学术研讨会暨2010空间天气学研讨会 AMP2010)

会议地点: 南京

会议语种:英文

页码: 13-15

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）