The Tunneling Magnetoresistance of Fe3O4 polycrystalline film

摘要：

Fe3O4 polyerystalline film was fabricated using magnetren sputtering technique from Fe2O3 target. A room temperature magnetoresistance of about -1.2％ has been observed. The temperature dependence of resistance was measured, and no Verway transition was observed. The resistance is proportional to exp(T1/2) down to liquid nitride temperature (78 K), indicating that the observed magnetoresistanee originates from the inter-granular spin-dependent tunneling through grain boundaries.

关键词： tunneling magnetoresistance Fe3O4 film

作者: JIANG Xiao-long XU Qing-Yu YAO Yi-Jun DU You-Wei

作者单位: College of Mathematics & Physics, Nanjing University of Information Science & Technology, Nanjing, 2 National Laboratory of Solid State Microstructures, Nanjing University,Nanjing 210093

会议类型: 国际会议

会议名称: 2010 International Conference on Application of Mathematics and Physics(2010国际数理科学与气象学术研讨会暨2010空间天气学研讨会 AMP2010)

会议地点: 南京

会议语种:英文

页码: 249-252

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）