The simulation of 2DEG in AlxGa1-xN/GaN hetero junction quantum well

摘要：

In this paper, we take the effect of Al composition in AlxGa1-xN, doped concentration, temperature and passive layer on the AlxGa1-xN/GaN heterojunction quantum well into account. The calculated results of AMPS-1D software show that the effect of different Al composition on the depth of quantum well is slight. On the other hand, the effect of different doped concentration in AlxGa1-xN is obvious. When the doped concentration of GaN is fixed and at the same time we change the one of AlxGa1-xN from 1017 - 1021 cm-3.We find that the depth of quantum well and the doped concentration of AlxGa1-xN is positive correlation. Finally, the depth of well is deeper when the temperature is higher.

作者: B. Wan X.F. Wang K. X. Zhang

作者单位: College of Science, HoHai University, Nanjing 210098, China

会议类型: 国际会议

会议名称: 第三届亚太国际工程中计算方法学术会议暨第五届全国工程中边界元、无网格等数值方法学术会议(ICOME2009)

会议地点: 南京

会议语种:英文

页码: 1-14

在线出版日期: 2009-10-18（万方平台首次上网日期，不代表论文的发表时间）