Structural and optoelectronic properties of single crystalline SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD
(0) 12％ Gallium-doped tin oxide (SnO2:Ga) single crystalline films have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600℃. According to XRD patterns, the film deposited at 500℃ has the best single crystalline structure. Subsequently, 3 to 15％ doped films were fabricated at 500℃ using the same method, except that Gallium organometallic (OM) source was injected in pulsed-mode for the 3, 5 and 10％ -doped films. Then, structural and optoelectronic properties of the films were investigated in detail. The obtained films all have the rutile structure of pure SnO2. Film with resistivity of 1.09×10-2Ω cm, carrier concentration of 8.86×1019cm-3 and Hall mobility of 6.49cm2 v-1 s-1 was obtained at 5％ of Ga concentration. The average transmittance for the SnO2:Ga films in the visible range were over 90％.
SnO2:Ga MOCVD
Xuan Pei Feng Ji Jin Ma Ti Ning Zhenguo Song Caina Luan Yongliang Tan
School of Physics, Shandong University, Jinan, Shandong 250100, People’s Republic of China
国际会议
青岛
英文
763-766
2009-10-09（万方平台首次上网日期，不代表论文的发表时间）