Transparent conducting SnO2:Zn films prepared on sapphire by MOCVD
1-10％ atomic ratio of Zn/(Zn+Sn) zinc-doped tin oxide (SnO2:Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO2:Zn films were investigated. The obtained films were high quality crystalline films with high a-axis orientation. The optical transmittance of the SnO2:Zn films with the thickness 1-1.4μm was about 80％ in visible region. The Hall mobility and carrier concentration of the SnO2:Zn films varied with the Zn content increasing.
SnO2:Zn film MOCVD
Zhenguo Song Feng Ji Jin Ma Ti Ning Xuan Pei Yongliang Tan
School of Physics, Shandong University, Jinan, Shandong 250100, China
国际会议
青岛
英文
771-774
2009-10-09（万方平台首次上网日期，不代表论文的发表时间）