Influences on optoelectronic properties of damp heat stability of AZO and GZO for thin film solar cells
(0) This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72％ and 11.97％, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85℃ and 85％ relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.
ZnO:Al ZnO:Ga Damp heat optoelectronic Pulsed DC magnetron sputtering
Wen-Tsai Yen Jia-Hong Ke Hsin-Jung Wang Yi- Cheng Lin Jung-Lung Chiang
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, T Department of Electronic Engineering, Chung Chou Institute of Technology, Changhua, Taiwan
国际会议
青岛
英文
923-926
2009-10-09（万方平台首次上网日期，不代表论文的发表时间）