Structural and optical properties of SnO2 films grown on 6H-SiC by MOCVD
SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and optical properties of SnO2 films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometry. The XRD analysis revealed that the prepared samples were SnO2 epitaxial films of rutile structure with a clear relationship of SnO2(100)// 6H-SiC(0001). The average transmittance for the deposited SnO2 samples in the visible range was about 60％.
SnO2 films Epitaxial growth MOCVD 6H-SiC
Zhen Zhu Jin Ma Caina Luan Fan Yang Lingyi Kong
School of Physics, Shandong University, Jinan, Shandong 250100, P R China
国际会议
青岛
英文
1539-1542
2009-10-09（万方平台首次上网日期，不代表论文的发表时间）