Ultra-low On-resistance Trench Gate MOSFET with Buried P-Island

摘要：

A high voltage trench gate MOSFET (TMOS) with an ultra-low specific on-resistance (Ron) is proposed. The MOSFET is characterized by the combination of a trench gate and two buried p-islands (BPIs) formed in the n-epitaxial layer by the self-alignment (BPIs TMOS). In the blocking state, the superjunction structure, formed by the BPIs /n-drift region, sustains a higher breakdown voltage (BV). The high drift region doping concentration due to the superjunction structure lowers Ron. Influences of structure parameters on the breakdown voltage and specific on-resistance are analyzed for the proposed device by simulator MEDICI. BV of 85V and Ron of 22mΩ.mm2 are obtained.

作者: Xiaorong Luo Daping Fu Huanmei Gao Xi Chen

作者单位: State key Laboratory of Electronic Thin Films and Integrated devices, University of Electronic Scien State key Laboratory of Electronic Thin Films and Integrated devices, University of Electronic Scien

会议类型: 国际会议

会议名称: 2010 International Conference on Communications,Circuits and Systems(2010年通信、电路与系统国际会议)

会议地点: 成都

会议语种:英文

页码: 496-498

在线出版日期: 2010-06-28（万方平台首次上网日期，不代表论文的发表时间）