会议专题

Ultra-low On-resistance Trench Gate MOSFET with Buried P-Island

A high voltage trench gate MOSFET (TMOS) with an ultra-low specific on-resistance (Ron) is proposed. The MOSFET is characterized by the combination of a trench gate and two buried p-islands (BPIs) formed in the n-epitaxial layer by the self-alignment (BPIs TMOS). In the blocking state, the superjunction structure, formed by the BPIs /n-drift region, sustains a higher breakdown voltage (BV). The high drift region doping concentration due to the superjunction structure lowers Ron. Influences of structure parameters on the breakdown voltage and specific on-resistance are analyzed for the proposed device by simulator MEDICI. BV of 85V and Ron of 22mΩ.mm2 are obtained.

Xiaorong Luo Daping Fu Huanmei Gao Xi Chen

State key Laboratory of Electronic Thin Films and Integrated devices, University of Electronic Scien State key Laboratory of Electronic Thin Films and Integrated devices, University of Electronic Scien

国际会议

2010 International Conference on Communications,Circuits and Systems(2010年通信、电路与系统国际会议)

成都

英文

496-498

2010-06-28(万方平台首次上网日期,不代表论文的发表时间)