High-Voltage PSOI with Complementary Interface Charge Islands Structure

摘要：

A new complementary interface charge islands structure of PSOI high voltage device (CCI PSOI) is proposed, in which is characterized by a series of equidistant high concentration n+-regions and p+-regions on the top and bottom interfaces of dielectric buried layer, respectively. Complementary interface charge of top interface inversion holes and bottom interfaces inductived electrons effectively enhance the electric field of dielectric buried layer (EI) and reduce the electric field of silicon layer (ES), which both result in a high breakdown voltage (BV). The enhanced field △EI and reduced field △ES by the accumulated interface charges reach to 420.9V/μm and 26.14V/μm, respectively, which makes BV of CCI PSOI increase to 526V from 230V of the conventional PSOI by two-dimensional simulation.

作者: WU Lijuan HU Shendong Zhang Bo LI Zhaoji

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices of UESTC, Chengdu, Sichuan, 610 State key Laboratory of Electronic Thin Films and Integrated Devices of UESTC, Chengdu, Sichuan, 610

会议类型: 国际会议

会议名称: 2010 International Conference on Communications,Circuits and Systems(2010年通信、电路与系统国际会议)

会议地点: 成都

会议语种:英文

页码: 499-502

在线出版日期: 2010-06-28（万方平台首次上网日期，不代表论文的发表时间）