Optimization of Switching Losses and EMI in a Gate Driver Circuit for IGBT Devices
IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. The aim of this paper is to propose a circuit topology that allows an acceptable compromise between switching speed, power dissipation and electromagnetic radiation of an IGBT device, by suitably shaping the gate current during the switching transients. The paper begins with an analysis of the switching waveforms highlighting the parameters which affect the switching characteristics. Stimulation results are presented for an IGBT device in a hard switching application.
Han Wang Bo Zhang
State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu, Sichuan, China
国际会议
2010 International Conference on Communications,Circuits and Systems(2010年通信、电路与系统国际会议)
成都
英文
532-535
2010-06-28（万方平台首次上网日期，不代表论文的发表时间）