A Simple and Effective ESD Protection Structure for High-Voltage-Tolerant I/O Pad

摘要：

A simple and effective ESD protection structure is proposed for the high-voltage-tolerant I/O pad. It can tolerate a voltage higher than the power supply voltage without the leakage current caused by PMOS in original GGNMOS/ GDPMOS protection structure. And it can provide a direct current path under PD/ND mode ESD stress, which is missing in general ESD design for the high-voltage-tolerant I/O pad. It can sustain 2.7A TLP stress according to our simulation result. This protection structure can also be used for high voltage and high power open drain driver and the negative-voltage-tolerant I/O pad.

作者: Hang Fan Lingli Jiang Bo Zhang

作者单位: University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China

会议类型: 国际会议

会议名称: 2010 International Conference on Communications,Circuits and Systems(2010年通信、电路与系统国际会议)

会议地点: 成都

会议语种:英文

页码: 605-608

在线出版日期: 2010-06-28（万方平台首次上网日期，不代表论文的发表时间）