Investigation of Different Strain Configurations in Gate-All-Around Silicon Nanowire Transistor

摘要：

The impacts of three different strain configurations on both DC and RF performance of n-type silicon nanowire transistors (n- SNWTs) are investigated. It is found that the longitudinal tensile strain is the most efficient in improving the driving current and RF performance of n-SNWTs under the same stress value. In addition, the transverse compressive strain is also beneficial to the performance improvement, and can be combined in the stress engineering. Particularly, transverse biaxial compressive strain can effectively enhance the driving current, and at the same time slightly decrease the off-current of n-SNWT, which is beneficial for high speed and low power design. The results indicate that, due to the unique feature of gate-all-around 1D structure, the strain design in SNWTs, especially the combination of longitudinal strain and transverse strain, can be specially optimized for better device performance.

作者: Quanxin Yun Jing Zhuge Ru Huang Runsheng Wang Xia An Liangliang Zhang Xing Zhang Yangyuan Wang

作者单位: Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 15-20

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）