Review on Methods for Trench MOSFET Gate Oxide Reliability and Switching Speed Improvement
In high density vertical trenched power double-diffused metal oxide semiconductor (DMOS), the trench width (CD) continually shrinks as driven by the market for low cost and longer battery lifetime. Subsequently, this imposes technical challenges to keep high breakdown voltage without affecting other performances such as gate charge and on-state resistance. This paper discusses some of the technical challenges faced and suggested solutions. The various methods to improve the trench oxide uniformity and trench corner profile are also presented through experimental data. Different methods to thicken the trench bottom oxide to reduce gate-to-drain capacitance (Cgd) and eliminate the oxide weak points are introduced. This paper also reviews advanced industrial developments to increase the device switching speed as well as breakdown voltage.
Ng Hong Seng
X-FAB Sarawak Sdn. Bhd, 93350 Kuching, Sarawak, Malaysia
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
21-26
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）