Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies

摘要：

CMOS scaling has a beneficial impact on the radiation hardness of the technologies and often only requires a further optimization of either the Shallow Trench Isolation (STI) or the Buried Oxide (BOX) in case of a SOI technology. From a reliability viewpoint, heavy-ion induced ionization damage in the gate dielectric may lead to Radiation-Induced Leakage Current (RILC), Radiationinduced Soft Breakdown (RSB), Single Event Gate Rupture (SEGR) or the creation of latent damage. This paper discusses the present knowledge of the radiation impact on the operation and the reliability of deep submicron CMOS technologies.

作者: C. Claeys S. Put A. Griffoni A. Cester S. Gerardin G. Meneghesso A. Paccagnella E. Simoen

作者单位: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium EE Depart. KU Leuven, Kasteelpark Arenberg 10, B-3001 Le IMEC, Kapeldreef 75, B-3001 Leuven, Belgium EE Depart. KU Leuven, Kasteelpark Arenberg 10, B-3001 Le IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Dipartimento di Ingegneria dellInformazione, Università Dipartimento di Ingegneria dellInformazione, Università di Padova, I-35131 Padova, Italy Dipartimento di Ingegneria dellInformazione, Università di Padova, I-35131 Padova, Italy Istituto N IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 39-46

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）