Junction Technology for 2D and 3D devices-Self Regulation Plasma Doping SRPD

摘要：

For near future 2D and 3D devices, Self-Regulation Plasma Doping (SRPD) with B2H6/Helium gas plasma has been developed to provide precisely controllable ultra-shallow junctions for planar FETs and conformal junctions for fins at the same time. Manufacturing level of process controllability (<1％ on dose) and advantage on the devices of SRPD have been achieved with FinFETs and planar pMOSFETs.

作者: Bunji Mizuno

作者单位: Ultimate Junction Technologies Inc., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka, Japan

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 47-53

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）