The Combined Impact of Total Ionizing Dose Effect and Negative Bias Temperature Stress on Deep Sub-Micron pMOSFETs
In this paper, we investigate the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) on deep sub-micron pMOSFETs. It is found that the high temperature of the NBT stress induces an annealing effect by removing part of the radiation-induced positive charges. If we choose a relatively low temperature to avoid the annealing effect, a remarkable radiation acceleration effect on device degradation is observed and the lifetime of pMOSFETs significantly reduces due to more radiation-induced new hole traps in the oxide. However, the acceleration effect seems independent of the oxide electric field during NBT stress. The work in this paper indicates that it is important to choose proper NBT stress conditions if we use NBTI to predict the lifetime of the pMOSFETs which operate in the radiation environments.
Jian Wang Wenhua Wang Detao Huang Shoubin Xue Sihao Wang Wen Liu Ru Huang
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
61-66
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）