Heterostructure HEMT Electronic Device Simulation with Density Functional Theory

摘要：

A new simulation algorithm based on the density functional theory is proposed in the application of the simulation of heterostructure HEMT devices. In this new algorithm, the Gauss bias is adopted and a new energy functional is developed to solve the Schrodinger and Poisson equations in the HEMT device. By using Gauss biases, this algorithm could avoid large data storage and reduce the computational time of HEMT device simulation. One exaple compared with nonuniform mesh shows the advantage of this new algorithm, where only several Gauss biases are required to obtain high resolution numerical results of wave functions. Deduced from the density functional theory, this new simulation algorithim is suitable for a full 3D simulation of semiconductor devices. Finally, the result of a three-dimensional numerical simulation of the AlGaN/GaN heterostructure is obtained.

作者: Yiqing Hu Jinyan Wang C.P.Wen Min Yu LingFeng Mao Yilong Hao

作者单位: Institute of Microelectronics, Peking University, 100871, Beijing, China

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 79-84

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）