Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits
A variety of lateral high-voltage devices has been investigated in the range of 200 V to 300 V applications in power ICs, including reduced surface electric field (RESURF), laterally double diffused MOS (LDMOS) transistor, lateral variation doping (LVD), vertical linear doping (VD) and linear thickness (LT) devices. These devices are described and compared on the basis of on-state, offstate breakdown voltages, on-state resistance (Rdson), safe operation area (SOA) and Baligas Figure-Of-Merits (BFOM). It is observed that for devices operating lesser than 300 V, the VD LDMOS exhibits superior performance, where as higher voltage devices ( ≧ 300 V), the LT device proves to be superior. Applications arround 200 V, the VD device exhibits only a marginal improvement over the LT LDMOS device.
Gene Sheu Yin-Huang Lin Wen-Chin Tseng Shao-Ming Yang Chao-Nan Chen Yu-Feng Guo
Department of Computer Science and Information Engineering, Asia University, Taichung, Taiwan,41354, School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Na
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
103-108
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）