Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness
This paper reports a novel device structure which operates at low electrical field and a high potential at the internal drain region.The kink and quasi-saturation effects were minimized for this small 0.15 micron SOI LDNMOS with 0.13 micron gate length. Numerical simulation is used to show that the potential and electric field distribution within a small linear thickness (LT) LDMOS SOI device is quite different from that observed in lateral linear doping (LD), uniform and vertical linear doping (VLD) devices. Reduction of the drain electric field and the inter drain point potential barrier brings about a dramatic decrease in the Kink effect, improvement of quasi-saturation, along with larger safe operate area (SOA) performance and a lower on-resistance (Ron).
Gene Sheu Cheng-yen Wu Shao-Ming Yang Yu-Feng Guo
Department of Computer Science and Information Engineering, Asia University, Taichung, Taiwan,41354, School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Na
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
115-120
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）