Analysis and Optimization of High-Voltage Devices in a BCD Process

摘要：

This paper presents two-dimensional process and device(15V) simulation results and optimization of power device in a 0.35um Bipolar/CMOS/DMOS(BCD) process. Detailed device simulations and structure designs have been done. Test structures with specific considerations have been developed. With both simulation and experimental results, the optimized devices show excellent performance, which have been demonstrated with characterization results from devices on wafers from process qualification lots.

作者: Chunxiao Fu Fan Xu Yuhua Cheng

作者单位: Shanghai Research Institute of Micro Electronics, Peking University, Shanghai, China School of Softw Shanghai Research Institute of Micro Electronics, Peking University, Shanghai, China ShenZhen Gradua

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 121-124

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）