Characterization of Oxidation Induced Substrate Loss

摘要：

Post implant resist strip for 45 nm and below poses challenges with regard to Si substrate loss due to oxidation and surface modification. In particular, the process to form Ultra Shallow Junctions (USJ) with high-dose implant (HDI) creates a carbonized, cross-linked crust on the surface of the resist. Removal of the implanted resist typically requires temperature-controlled and chemically aggressive approaches which can lead to excessive substrate damage. In order to ensure the desired device characteristics, this damage must be kept to a minimum, and the required optimization is dependent on highly sensitive metrology techniques. This paper reports on wafer mass loss as a direct linear measurement technique to quantify substrate loss.

作者: Liam Cunnane Darren Moore Carlo Waldfried Shijian Luo Adrian Kiermasz Gary Ditmer

作者单位: Metryx Ltd., Bristol UK Axcelis Technologies Inc., Beverly MA, USA

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 139-144

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）