Modeling of Variability in Geometric Parameters of MOSFETs for DFM Applications

摘要：

For improving manufacturability and yield, proactive DFM (design for manufacture) at device level is required. This paper proposes an improved methodology to obtain the effective channel length of MOS transistors with non-rectangular gates for modeling the process variability.

作者: Danqing Liu Lele Jiang Xiaojing Qin Yuhua Cheng

作者单位: Shanghai Research Institute of Microelectronics, Peking University , Shanghai 201203, China Shanghai Research Institute of Microelectronics, Peking University , Shanghai 201203, China School o

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 157-162

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）