Design and Optimization of Power Devices in a BCD Process

摘要：

We present the results of design and optimization of high-voltage devices (170V) in a novel 0.35um BCD process. This process is based on a 0.35um BCD process. Process parameter optimization and device structures have been designed after detailed TCAD simulation and experimental device characterization. Several approaches such as adjusting field plate and optimizing LDD structure have been tried to improve breakdown voltage of the devices. By analyzing experiment results from several process splits, designs of 170V high voltage devices have been finalized. Good performance and very competitive specific on-resistances of devices after optimizition have been achieved.

作者: Fan Xu Chunxiao Fu Yuhua Cheng

作者单位: Shanghai Research Institute of Micro Electronics, Peking University, Shanghai, China ShenZhen Gradua Shanghai Research Institute of Micro Electronics, Peking University, Shanghai, China School of Infor

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 169-172

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）