Relating Extrinsic Breakdown Statistics to the Initial Current Leakage Distribution in Gate Oxides

摘要：

By fitting the statistical distribution of leakage current in as-grown gate oxides, we extract information about the density and severity of defects that cause extrinsic breakdown. With this information and the well-established percolation model of oxide breakdown we model the complete oxide failure distribution including intrinsic and extrinsic breakdowns. These results might have strong impact on product reliability assessment procedures since measuring the initial current leakage distribution at low voltage is a relatively cheap non-destructive test which can limit the use of extremely costly product reliability stress experiments.

作者: J. Sune S. Tous E. Y. Wu

作者单位: Department dEnginyeria Electrònica, Universitat Autònoma de Barcelona, 08193-Bellaterra, SPAIN IBM Microelectronics Division, Essex Junction, Vermont, USA

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 243-248

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）