Effect of Oxidation Enhanced Diffusion on Hot Carrier Injection Induced Degradation in N-Type High-Voltage DDDMOSFET

摘要：

This paper investigates how the oxidation enhanced diffusion effect influences the reliability of hot carrier injection (HCI) in Ntype high-voltage double-diffused drain MOSFET (DDDMOSFET). The oxidation enhanced diffusion influences impurity diffusion in silicon evidently, thus changes the device characteristic and reliability. By NDD drive-in at high temperature with N2 + O2 mixed atmosphere, we make use of the oxidation enhanced diffusion effect in NDD region of N-type HV DDDMOSFET to improve the HCI reliability. And the results are accordant with reliability simulation of TCAD softwar.

作者: Zhangpeng Deng Xi Li Huirui Zhang Yueyun Yu Aibo Huang Gang Cao Yanling Shi

作者单位: East China Normal University, Shanghai 200062, China Department of Reliability Engineering & Failure Analysis, Shanghai HuaHong NEC Electronics Company,

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 255-260

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）