A New BSIM3v3 SPICE Model for Reliability of Hot Carrier Injection Effect in MOSFET

摘要：

This paper reports a new BSIM3v3 SPICE reliability model for describing the reliability of hot carrier injection (HCI) in MOSFET, which can be widely used in traditional process MOSFET. In this work, thousands of BSIM3v3 model parameters are analyzed, seven parameters primarily affected by HCI are extracted and optimized in original BSIM3v3 source code.The I-V simulation results after parameter extraction fits the measured results very well, so an accurate new model of MOSFETs reliability model is achieved. Using the new BSIM3v3 SPICE reliability model, the idvd curves at the stress time from 10 to 50000s of the nMOSFET with 10μm gate length and 0.5μm gate width can be achieved. So the device characters variation with time can be monitored. Besides, the typical Idsat, Vth, Idlin and Gmax degradation as a function of stress time are also plotted and the lifetime of MOSFETs can be evaluated from these functions.

作者: YueYun Yu Xi Li Zheng Ren Yanling Shi Zhangpeng Deng Shaojian Hu Yi Tang Wei Zhou

作者单位: East China Normal University, Shanghai 200062, China IC Research & Development Center, Shanghai

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 275-280

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）