会议专题

Failure Analysis of Cracked Die

Aimed at crack die problem of micro-package, a series of experiments on failure components were conducted by using optical microscope, scanning electron microscope (SEM), Fein focus X-ray, cross section and various chemical etched methods. The failure analysis technique of cracked die in microelement was presented in detail, and the cause of these failure components was found finally. Wafer processing defect on the die has proven to be a contributing factor in the cracking of die. Mechanical damage acted as a stress riser from which the die crack may propagate. The root cause of die cracking in this failure was a consequence of the force inequality which came from mechanical loads in the package.

Lili MA S. X. BAO

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu Sichuan 610054

国际会议

China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

上海

英文

281-287

2010-03-18(万方平台首次上网日期,不代表论文的发表时间)