Different Interface Role in CuOx Based RRAM
For the embedded application of resistive switching memory using CuOx films, the differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors. Al/CuxO/Cu and TaN/CuxO/Cu devices were fabricated and investigated for the memory switching characteristics, data retention and mechanism, respectively. The results show better stability, preferable endurance, and larger resistance ratio for Al electrode. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. TaON was observed for TaN/CuxO/Cu device at the anode interface by X-ray photoelectron spectroscopy and transmission electron microscopy, which is believed to play a key role in the resistance transition. The physics behind this phenomenon of reactive top-electrode is revealed. The interface filament/charges trapping dominated model is proposed to clarify the electrical characteristics of the topelectrode/ oxide reactions.
J.G.Wu P. Zhou Y.Y. Lin R. Huang S. Song Q. Zou H.M. Wu M.H. Chi
SOC Technology Development Center, Semiconductor Manufacturing International Corp., Shanghai, 201203 School of Microelectronics and State Key Lab of ASIC & System, Fudan University, Shanghai 200433, Ch
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
309-314
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）