STI Liner Evolution as the CMOS Scaling Down

摘要：

As the planar CMOS transistor devices scaling down, a lot of original process have to be optimized, developed or changed to meet the evolutional requirement, and the new process elements were continuously implemented into the manufacture. The STIliner is one of the processes from the STI module, which comes after the trench etch and before the trench gap-fill, to provide an excellent interface and good adhesion between the silicon and the oxide. While the device scaling down, some device issues, such as, the incident of dislocations which impacted on the device leakage current, the dopant segregation which result in the threshold voltage variation and impact the inverse narrow width effect (INWE) and the gate oxide integrity (GOI), etc, are associated with the STI module and can be improved by the STI-liner process. The STI liner process is evolved from the furnace oxidation, the dry RTO, the nitrided oxide liner to the ISSG.

作者: Zhibiao Zhao Ji Yue Tang Zhijun Fang Ganming Zhao

作者单位: Applied Materials China, Shanghai (201203), China

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 339-344

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）