Growth control of GaAs epilayers with specular surface on nonmisoriented (111)B substrates by MBE
GaAs epilayers with specular surface are successfully obtained on nonmisoriented GaAs(111)B substrates by conventional MBE. The growth control achieved via in situ, real time monitoring of the specular beam intensity of reflection high-energy electron diffraction (RHEED) on static and dynamic GaAs(111)B surfaces is reported. The dependence of GaAs(111)B surface reconstruction phases on growth parameters is discussed. The proper starting surface phase (√19×√19) is identified by RHEED for the growth of mirror-smooth epilayers. Growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity.
Ruixia Yang Yibin Wu Chenliang Niu Fan Yang
School of Information Engineering , Hebei University of Technology, Tianjin 300130, China The 13th Electronic Research Institute, CETC, Shijiazhuang 050051, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
351-357
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）