Mechanism Analysis of Plasma Charging Damage on Gate Oxide for HDP FSG Process

摘要：

For its stability and relatively lower K value, FSG (fluorine silica glass) is widely used in 0.18μm and below VLSI process. In this paper, the plasma charging damage on 30A gate oxide from the high-density-plasma deposition (HDP) of FSG is investigated. Positive and negative nondestructive JTDDB stress is applied to fresh transistors to simulate the plasma charging current. According to the results comparison, positive plasma stress at the end of the HDP-CVD FSG deposition is found to be the major cause of damage. The damage is located near the Gate/SiO2 interface. By increasing the FSG thickness, the damage is effectively suppressed.

作者: Xi Li Peng Wang Jiao Bu Yuwei Liu Gang Cao Yanling Shi Chunling Liu Fei Li Lingling Sun

作者单位: Department of E.E., East China Normal University, Shanghai 200241, China Shanghai HuaHong NEC Electronics Company, Ltd, Shanghai 201206, China

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 359-364

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）