WCVD Seam Hole Improvement to Prevent BEOL Copper Diffusion

摘要：

With the feature size shrinking in IC manufacturing, copper is to be used in BEOL metallization to decrease RC delay and improve electro-migration for 0.13um technology node and below. Moreover, tungsten still remains as the material of choice for the contact. As reported in most papers, copper is easily to diffuse through the seam of tungsten plug. Many researches focus on the dielectrics or Ta/TaN barrier layer enhancement to prevent Cu diffusion. In our study, another copper diffusion mechanism, which tunnels through the contact Tungsten seam hole and induces product device failure, is proposed. WCVD process optimization for seam hole improvement is also studied to prevent copper diffusion.

作者: Xia Li Justin Ji Dong Ou-Yang Ronnie Jiang Jiwei Zhang Robin Chiu Paul-Chang Lin Charles Xing

作者单位: SMIC, 18,Zhangjiang Rd, Pudong, Shanghai 201203,PRC SMIC (Semiconductor Manufacturing International Corporation)

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 365-369

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）