Crown Defect Reduction and Cp Yield Improvement for High Voltage Power Management IC Product
In advanced BEOL process, metal defect reduction plays an important role for Cp yield improvement. Crown defect is one of the killer defects. It develops in Litho process, forms after Aluminum etching, and finally turns out to be ring-type Al2O3 residue. Aluminum grain size is strongly related with crown defect performance. Especially for thick Aluminum film (>3μm), which is widely applied on high voltage power management IC product, it is a big challenge to control grain size and keep a relatively uniform film surface. In this paper, a study of the relationship between Aluminum grain size and crown defect is presented. Also, a novel approach to control the grain size is shown to reduce the crown defect for Cp yield improvement.
Guan-Qun Zhang Athics Gu Yi-Hui Lin Peng Sun Jiwei Zhang Wen-Pin Chiu Paul-Chang Lin Cheng Xing
School of Micro-electronics in Fudan University SMIC, 18,Zhangjiang Rd, Pudong, Shanghai 201203,PRC SMIC, 18,Zhangjiang Rd, Pudong, Shanghai 201203,PRC
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
377-382
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）