Physical and Electrical Characteristics of the High-K Er2O3 Polyoxide Deposited on Polycrystalline silicon
In this study, the high-k Er2O3 gate dielectrics were deposited on polycrystalline silicon were fabricated for the first time. The as-deposited samples treated at different annealing temperatures were examined by applying different material and electrical analysis. All the electricalanalysis and structural investigation concluded that annealing temperature at 8000C was the optimal condition that formed the well-crystallized Ta2O5 film. The high-k Er2O3 dielectric will be promising for future generation of electronic device applications.
Chyuan. Haur. Kao Hsiang Chen Jing-Siang Chiu
Department of Electronic Egineering, Chang Gung University,, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Y Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
389-394
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）