Bottom-Anti-Reflective coatings (BARC) for LFLE Double patterning process
Double patterning process with ArF immersion lithography has been developed as one of the most promising candidate for hp32 node and beyond. However complicated process flow and cost of ownership are the critical issue for this process. LELE (Litho-Etch-Litho-Etch) is the one of the standard process, but in order to reduce the process and cost, that LFLE(Litho-Freezing-Litho-Etch) and LLE (Litho-Litho- Etch) process have been investigated as the alternative process. In these processes, Organic Bottom-Anti- Reflective coating (BARC) is used two times with same film in both 1st Litho and 2nd Lithography process. In 2nd Lithography process, resist pattern will be printed at space area where exposed and developed in 1st lithography process. Therefore, organic BARC needs to have process stability in Photo and development step to keep good litho performance between 1st and 2nd lithography in LFLE / LLE process. This paper describes the process impact of 1st exposure and development for organic BARC, and the LFLE / LLE performance with optimized organic BARC will be discussed.
Rikimaru Sakamoto Daisuke Maruyama Takafumi Endo Bang-Ching Ho Shigeo Kimura Tomohisa Ishida Masakazu Kato Noriaki Fujitani Ryuji Onishi Yoshiomi Hiroi
Semiconductor Materials Research Department, Electronic Materials Research laboratories, Nissan Chemical Industries, Ltd.635 Sasakura, Fuchu-machi, Toyama 939-2792 Japan
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
479-487
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）