Polymer-bound PAGs for EUV Lithography

摘要：

This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 24nm half pitch resolution with an LWR of 3.8nm and a photospeed of 11mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.

作者: James W. Thackeray Emad Aqad Su Jin Kang Kathleen Spear-Alfonso

作者单位: Dow Electronic Materials, Semiconductor Technologies 455 Forest St, Marlborough MA 01752

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 489-496

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）