Novel Approach for W Loss Defect Prevention on WCMP Re-clean Process

摘要：

With the device dimension rapidly shrinking, Tungsten Chemical Mechanical Polishing (WCMP) becomes one of the critical manufacturing processes for multi-layer interconnection of ULSI (ultra large scale integrated) circuits. The effectiveness of Post- CMP cleaning is one of critical steps for particles removal and product CP yield improvement. WCMP re-clean process is a general way to further reduce particles on high-defect-density impacted wafers in IC manufacturing. However, W loss defect could be generated frequently due to the extra re-clean process introduced in post WCMP step for sub-0.13um devices. In this paper, the mechanism of W loss defect after re-clean process is studied. Also one novel approach is proposed to prevent W loss and improve product CP yield.

作者: Jian Zhang Zhe Wang Jing Wen Duan-Yi Wu Paul-Chang Lin Charles Xing

作者单位: SJTU (Shanghai Jiao Tong University) 800, Dongchuan Rd, Minhang, Shanghai, PRC, 200240 SMIC, 18 Zhan SMIC, 18 Zhangjiang Rd, Pudong, Shanghai 201203,PRC

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 545-549

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）