Study on Effects of Slurry Key Factors on Advanced Oxide CMP Performance
With the advancement of technology nodes, the demands on oxide CMP have become more stringent. Defectivity, rate, profile, selectivity to various films (in special applications), planarization efficiency, process window, as well as costs, are the main considerations in an advanced oxide CMP process. Polishing rate and profile tuning by slurry formulations are challenging in certain silica based slurry systems. In this paper, various designed, novel additives are explored to enhance oxide CMP performance. The effects of key factors including abrasive types, chemistry, and pH range on removal rate and profile, especially on the wafer edge rate drop, have been studied. The results indicated that a controlled removal rate and desired wafer edge profile can be achieved through the optimum combination of functional chemistry compositions, pH, abrasive type and properties. A number of possible mechanism will also be discussed.
Peter Song Yefang Zhu Chunlei Zhang Daisy Yao Leo Lee Gu Yuan Chris Yu Charles Xing Paul-Chang Lin Tao Sun Zhiyong Ma
Anji Microelectronics (Shanghai) Co., Ltd, Pudong, Shanghai, China, 201203 Semiconductor Manufactory International Corporation，Pudong, Shanghai, China, 201203
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
557-562
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）