Tribological and Kinetic Characterization of 300-mm Copper Chemical Mechanical Planarization Process
The tribological and kinetic attributes of 300-mm copper chemical mechanical planarization process were characterized in this study. Coefficient of friction (COF) ranged from 0.39 to 0.59 for the Cabot Microelectronics Corporation D100 concentrically grooved pad, indicating that boundary lubrication was the dominant tribological mechanism. In comparison, COF decreased sharply from 0.55 to 0.03 for the Dow Electronic Materials IC1000 Kgroove pad, indicating that the tribological mechanism transitioned from boundary lubrication to partial lubrication. For both pads, copper removal rate exhibited highly non-Prestonian behavior. A two-step modified Langmuir-Hinshelwood model was used to simulate copper removal rate, wafer surface reaction temperature, as well as chemical and mechanical rate constants. The simulated copper removal rates agreed very well with the experimental values. The simulated chemical rate constant to mechanical rate constant ratios indicated that the IC1000 pad generally produced a more mechanically controlled removal mechanism in this study.
Z. Han A. Philipossian Y. Zhuang Y. Sampurno A. Meled Y. Jiao X. Wei J. Cheng M. Moinpour D. Hooper
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona 85721, Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona 85721, Intel Corporation, Santa Clara, California 95052, USA Intel Corporation, Albuquerque, New Mexico 87124, USA
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
587-592
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）