Investigation of Mechanical Effects on Advanced Copper CMP
Chemical mechanical planarization (CMP) of copper is a critical step in advanced IC interconnects technology. The key performance metrics of a Cu CMP are the removal rate, removal rate profile, dishing and erosion, process window, and defectivity. Many researchers have studied the mechanisms of Cu CMP. The present investigations will mainly focus on the mechanical effects on advanced Cu CMP at low down forces. The two main mechanical factors, intrinsic properties of abrasives and polishing process conditions, were evaluated. It was found that the abrasive properties such as mean size, surface area, solid concentration and process conditions such as polishing down force and rotation speed have strong impacts on Cu CMP performance.
Jianfen Jing Chris Yu Zhiyong Ma Paulchang Lin Pei Li Charles Xing Yuan Gu Xinyuan Cai Xiaohua Yang Danny Shiao
Anji Microelectronics (Shanghai) Co., Ltd., Shanghai, China Semiconductor Manufacturing International Corporation, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
593-598
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）