Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5

摘要：

This study explores the effect of pH and abrasive concentration on the chemical mechanical polishing of blank Ge2Sb2Te5 (GST) film using the colloidal silica-based slurry. High polishing rates were observed at low pH values and material removal rate (MRR) appears as a linear function of abrasive concentration. To better understand the effect of abrasive concentration on the material removal, MRR per abrasive particle was calculated and on-line coefficient of friction (COF) test was also conducted. Experimental results show that MRR per particle decreases along with abrasive concentration and COF increases linearly according to the abrasive concentration, which indicates that polishing efficiency per particles decreases linearly and MRR is strong related to COF respectively, during the CMP process.

作者: Zefang Zhang Weili Liu Zhitang Song

作者单位: State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China Shanghai Xinanna Electronic Science & Technology

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 605-611

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）