The cleaning of the surface of silicon after CMP
The cleaning of silicon after CMP(chemical mechanical polishing) in ULSI is studied utilizing preferential adsorption knowledge. In the high-speed development of ULSI, the influence of surface quality and rate of production of devices become more and more important.. There are three kinds of adsorption, organic impurity, impurity particles and metal ion on the surface of silicon. The mainly method which is used to clean the surface of the silicon after CMP is double-side scrubbing. Although many companies apply this method to clean the surface,the method requires that the silicon wafers should be scrubbed and washed in 2h after polishing.The disadvantages are inextricable, for example, high expensive equipment,low efficiency and etc. In this paper, on the basis of analyzing the adsorption state of the contaminated particles on the surface of the polished silicon wafers,a non-ion surfactant was chosen which is adsorbed onto the polished silicon wafers.
Yi Hu Yuling Liu Xiaoyan Liu Yanlei Li
Institute of Microelectronic Technology and Materials,Hebei University of Technology,Tianjin 300130, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
661-665
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）