Characterization of PECVD UV-Transparent Silicon Oxynitride for Passivation of Non-flash Memory Devices
Conventional silicon oxynitride SiON, superior to SiN due to its lower stress and better impervious barrier properties to SiO2, has found only limited application as the passivation layer for non-volatile memory due to its opacity to ultraviolet (UV) light. To tackle this issue, a UV-transparent silicon oxynitride process is developed. A full factorial design of experiment (DOE) is used to study the UV-transmittance of the film from the process parameters. In addition, FT-IR is performed to characterize the Si-O-N bonds, pin-hole test for the film integrity, and varying UV erase time for the corresponding device performance.
Zheng-Jun Hu Shou-Mian Chen
Shanghai IC R&D Center 497 Gaosi Road, Zhangjiang Hi-Tech Park, Shanghai, 201210
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
675-678
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）