Ta(N) Barrier film effect on Via RC in advanced Cu interconnection

摘要：

The TaN/Ta stack film is widely used as the barrier layer for Cu interconnection in modern VLSI industry. The correlation between the TaN/Ta barrier layer process and the Via RC is presented in this study. A model was established to estimate the Via RC based on bottom Ta thickness on a defined structure. In addition, two corresponding optimized approaches were developed to improve the current process.

作者: Luo Liechao Adrian Hu Jian Kang Summer Gong Zhitao Cao

作者单位: Applied Materials China, Shanghai, China Semiconductor Manufacturing International Corp, Shanghai, China Applied Materials, Santa Clara, USA

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 685-691

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）