On the process and material sensitivities for high-k based dielectrics
Multi-element and multilayer high-k dielectric stacks are being explored for future generation logic and memory devices. The increased material complexity can have a significant impact on the thermal stability and crystallization behavior of the stacks directly or indirectly affecting their material and electrical properties. We have studied the effect of composition and layer thickness for hafnium and rare earth based (lanthanum and dysprosium) systems on crystallization and intermixing (silicate formation). Our results show that for multilayer dielectric stacks, the thermal stability and intermixing is function of the composition and thickness of the individual layers.
S. Van Elshocht N. Menou L. Breuil D. Pierreux J.W. Maes A. Hardy M.K. Van Bael M. Jurczak J.A. Kittl C. Adelmann M. Popovici J. Swerts A. Delabie L. Nyns X. Shi H. Tielens G. Pourtois
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium ASM Belgium, Kapeldreef 75, B-3001 Heverlee, Belgium Hasselt University and IMEC, division IMOMEC, Inorganic and Physical Chemistry–IMO, Diepenbeek, Belg
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
693-698
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）