High Doping HDP PSG Process Development
In this study, we have developed a 9wt％ PSG film for increasing the etch selectivity to poly gate by changing the sputtering gas from Argon to Helium to avoid the film haze and other issues. Due to the change of new sputtering gas, a new recipe has been developed to fine tune key film properties, including within wafer thickness non-uniformity (WIW NU％) and phosphor concentration uniformity in three dimensions. In order to obtain desired profile after etch process, it is very crucial to control the profile of initial layer and bulk PSG film phosphor doping concentration. Therefore, a new concept which is called PH3 flow ramp up has been developed and implemented. Other key concern of integration, i.e., how to control the flower pattern shape is also discussed in this paper.
Xinhua Cheng Hongfu Sun Xianyuan Li Ganming Zhao
Applied Materials China, Shanghai, China Grace Semiconductor Manufacturing Corp, Shanghai, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
705-709
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）