Study of Alternative Plasma Strip Techniques for Advanced Photoresist Removal
This paper reports on the investigation and development of two alternative plasma strip processes to meet the photoresist (PR) removal requirements of future technology nodes. Experimental results show that new plasma strip approaches not only have comparable crust breakthrough and removal capabilities as those of traditional O2/N2:H2 and fluorine-containing strip processes, but result in significantly lower silicon oxidation and hence the recess. In addition, an improved residue removal capability and very low metal (TiN and TaN) oxidation values have also been demonstrated. SIMS analyses of implanted silicon wafers processed with the new strip approaches have shown minimal dopant loss and profile changes. This work demonstrates that these novel plasma strip approaches are viable candidates for meeting the demanding wafer cleaning requirements of the 32nm technology node and beyond.
S. Luo O. Escorcia C. Waldfried D. Roh I. Berry III
Axcelis Technologies Inc., Beverly, MA 01915, USA
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
725-729
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）